N, H and C-atoms Density in Flowing Afterglows of Microwave R/N2-H2 and R/N2-CH4 Discharges with R=N2, He, Ar and Applications to TiO2 Surface Nitriding

Variations of N,H and C-atoms density have been determined along the reduced pressure flowing afterglows of microwave R/N2-H2 and R/N2-CH4 discharges with R=N2, He and Ar. Density of H and C-atoms and other nitrogen active species such as N2(A), N2(X,v>13), N2+,NH, N(2D), CN were obtained from that of N-atoms calibrated by NO titration , using the method of band intensity ratios in several conditions (between early and late afterglows). It has been obtained in addition the density of O-atoms and NO molecules coming from air impurity. It has been deduced the wall destruction probability of H, O and C-atoms on the quartz afterglow tube: ?HR,N2 = (1-3) 10-3 , ?OR,N2 =(0.4-1) 10-3 and ?CN2=(0.7) 10-3. The effects of H and C –atoms on N-atoms inclusion inside TiO2 surfaces are reported.